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周圣军，武汉大学教授、博士生导师。1983年出生于中国湖北省天门，长期从事机械电子工程、微电子科学技术研究工作。欢迎机械工程、微电子、电子信息、材料物理方向的同学报考硕士（学术学位、专业学位）和博士（学术学位、专业学位）研究生。

Email: zhousj@whu.edu.cn

研究方向：Mini/Micro-LED芯片；人工智能算法与芯片；微纳制造与MEMS；第三代半导体（GaN、AlN、SiC）；集成电路与光电子芯片；激光制造与高端半导体装备；光机电一体化与精密测试技术

教育及学术背景

2014.05-至今 武汉大学 机械工程系   教授（2019）

2014.07-2015.07 美国密歇根大学 电子工程与计算机系  Research Fellow

2011.12-2014.03  上海交通大学  机械工程博士后流动站点   博士后

2008.09-2011.12  上海交通大学 微电子学与固体电子学   博士

2005.09-2008.07 武汉理工大学 机械电子工程   硕士

2001.09-2005.07  武汉理工大学 电子科学与技术   学士

工业界经历

1．广东量晶光电科技有限公司

担任研发主管，负责广东量晶光电科技有限公司的大功率LED芯片及高压LED芯片的研发和产业化工作，主导研发的大功率LED芯片的发光效率达到193lm/W@350 mA，该技术指标达到国际领先水平。

2．佛山国星光电股份有限公司

担任项目主管，研制全自动SMD LED在线测试分选设备，负责研发的LED在线测试分选设备已经大规模应用于LED封装企业的产品生产线。

指导研究生情况

指导研究生获国家奖学金10人次，获武汉大学学术创新奖6人次，获阮立平奖学金2人次，获武汉大学跨学科青年学术论坛一等奖2人次，获优秀研究生标兵1人次。研究生毕业之后的工作单位主要有北京大学、华为、中兴通讯、迈瑞医疗、长江电力、烽火通信、华灿光电等。

发表学术论文

在Science Bulletin、Nano Energy、Laser & Photonics Reviews、Microsystems & Nanoengineering、ACS Applied Materials & Interfaces、Nanoscale、Applied Surface Science、Applied Physics Letters、Optics Express、Optics Letters、Advanced Photonics Research、IEEE TED和Journal of Applied Physics等期刊发表第一或通讯作者SCI论文96篇，研究成果被国际著名半导体行业媒体《Semiconductor Today》和《Compound Semiconductor》专栏报道31次。论文列表如下：

112. Xu Liu, Zhenxing Lv, Zhefu Liao, Yuechang Sun, Ziqi Zhang, Ke Sun, Qianxi Zhou, Bin Tang, Hansong Geng, Shengli Qi and Shengjun Zhou^∗, Highly efficient AlGaN-based deep-ultraviolet lightemitting diodes: from bandgap engineering to device craft. Microsystems & Nanoengineering, 10(1), 110 (2024).

111. Shengjun Zhou^∗, Lang Shi, Siyuan Cui, Yuechang Sun, and Zhou Xu, Schottky-contact intrinsic current blocking layer for high efficiency AlGaInP-based red mini-LEDs. Optics Letters, 49(13), 3765-3768 (2024).

110. Yuechang Sun, Lang Shi, Yongjin Cui, Bin Tang, Qianxi Zhou, Jiaming Zhuang and Shengjun Zhou^∗, Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes. Semiconductor Science and Technology, 39(7), 075008 (2024).

109. Siyuan Cui, Ke Sun, Zhefu Liao, Qianxi Zhou, Leonard Jin, Conglong Jin, Jiahui Hu, Kuo-Sheng Wen, Sheng Liu^∗, and Shengjun Zhou^∗, Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices. Science Bulletin, 69, 2080-2088 (2024).

108. Zhenxing Lv, Zhefu Liao and Shengjun Zhou^∗, Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode. Semiconductor Science and Technology, 39(5), 055006 (2024).

107. Ziqi Zhang, Qianxi Zhou, Xu Liu, Zhenxing Lv, Bin Tang, Hansong Geng, Shengli Qi, and Shengjun Zhou^∗, Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes. Optics Letters, 49(8), 2049-2052 (2024).

106. Siyuan Cui, Lang Shi, Leonard Jin, Qianxi Zhou, Yuechang Sun, Conglong Jin, Jiahui Hu, Kuosheng Wen, Zhou Xu, and Shengjun Zhou^∗, Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing. Optics Letters, 49(6), 1449-1452 (2024).

105. Qianxi Zhou, Jiahao Song, Ke Sun, Yuechang Sun, Sheng Liu, and Shengjun Zhou^*, Recent Progress in III-Nitride Tunnel Junction Light-Emitting Diodes. physica status solidi (RRL)–Rapid Research Letters, 18(5), 2300413 (2024).

104. Xiaoyu Zhao, Ke Sun, Zhenxing Lv, Zhefu Liao, Sheng Liu, and Shengjun Zhou^*, Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting Diodes. ACS Applied Materials & Interfaces, 16(5), 6605-6613 (2024).

103. Xiaoyu Zhao and Shengjun Zhou^*, Electroluminescence and temperature-dependent time-resolved photoluminescence of monolithically integrated triple-wavelength InGaN-based LED. Optics Letters, 48(24), 6492-6495 (2024).

102. Guoyi Tao, Siyuan Cui, Yuechang Sun, Ke Sun, Qianxi Zhou, and Shengjun Zhou^*, Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs. Optics Letters, 48(16), 4292-4295 (2023).

101. Zhefu Liao, Zhenxing Lv, Ke Sun, and Shengjun Zhou^*, Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode. Optics Letters, 48(16), 4229-4232 (2023).

100. Qianxi Zhou, Peng Du, Lang Shi, Yuechang Sun and Shengjun Zhou^*, Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer. Photonics, 10(6), 647 (2023).

99. Shengjun Zhou*, Zhefu Liao, Ke Sun, Ziqi Zhang, Yinzuo Qian, Pengfei Liu, Peng Du, Jingjing Jiang, Zhenxing Lv and Shengli Qi, High-power AlGaN-based ultrathin tunneling junction deep ultraviolet light-emitting diodes. Laser & Photonics Reviews, 18(1), 2300464 (2023).

98. Xiaoyu Zhao, Yuechang Sun, Lang Shi and Shengjun Zhou*, Performance improvement of yellow flip-chip mini-LEDs via full-angle distributed Bragg reflector. Journal of Applied Physics, 133(23), 235703 (2023).

97. Ke Sun, Yinzuo Qian, Zhenxing Lv, Shengli Qi and Shengjun Zhou*, Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration. Applied Physics Letters, 122(20), 202104 (2023).

96.  Lang Shi, Yuechang Sun, Yongjin Cui, Peng Du, Jiaming Zhuang and Shengjun Zhou*, Strategically constructed high-reflectivity multiple-stack distributed Bragg reflectors for efficient GaN-based flip-chip mini-LEDs, Journal of Physics D: Applied Physics, 56, 254003 (2023).

95. Yinzuo Qian, Zhefu Liao, Zhenxing Lv, Shengli Qi, and Shengjun Zhou*, Enhanced performance of 275-nm AlGaN-based deep-ultraviolet LEDs via internal-roughed sapphire and SiO₂-antireflection film, Optics Letters, 48, 1072-1075 (2023).

94.  Benjie Fan, Xiaoyu Zhao, Jingqiong Zhang, Yuechang Sun, Hongzhi Yang, L. Jay Guo, and Shengjun Zhou*, Monolithically Integrating III-Nitride Quantum Structure for Full-Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth, Laser & Photonics Reviews, 17, 2200455 (2023).

93.  Siyuan Cui, Guoyi Tao, Liyan Gong, Xiaoyu Zhao, and Shengjun Zhou*, In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes. Materials, 15, 8649 (2022).

92.  Zhenxing Lv, Xiaoyu Zhao, Yuechang Sun, Guoyi Tao, Peng Du, and Shengjun Zhou*, Unexpectedly Simultaneous Increase in Wavelength and Output Power of Yellow LEDs Based on Staggered Quantum Wells by TMIn Flux Modulation. Nanomaterials, 12, 3378 (2022).

91.  Yuechang Sun, Lang Shi, Peng Du, Xiaoyu Zhao, and Shengjun Zhou*, Rational Distributed Bragg Reflector Design for Improving Performance of Flip-Chip Micro-LEDs. Electronics, 11, 3030 (2022).

90.  Shengjun Zhou*, Xiaoyu Zhao, Peng Du, Ziqi Zhang, Xu Liu, Sheng Liu*, and L. Jay Guo*, Application of patterned sapphire substrate for III-nitride light emitting diodes, Nanoscale 14, 4887-4907 (2022).

89.  Shengjun Zhou*, Zehong Wan, Yu Lei, Bin Tang, Guoyi Tao, Peng Du, Xiaoyu Zhao, InGaN quantum well with gradually varying indium content for high efficiency GaN-based green light-emitting diodes, Optics Letters 47(5), 1291-1294 (2022).

88. Yinzuo Qian, Peng Du, Pengfei Liu, and Shengjun Zhou*, Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer, Journal of Applied Physics 131(9), 095702 (2022).

87.  Xu Liu and Shengjun Zhou*, Progress on Photovoltaic AlGaN Photodiodes for Solar-Blind Ultraviolet Photodetection, Chinese Optics Letters 20, 112501 (2022).

86. Peng Du, Lang Shi, Sheng Liu, and Shengjun Zhou*, Polarization-doped quantum wells with graded Al-composition for highly efficient deep ultraviolet light-emitting diodes, Micro and Nanostructures 163, 107150 (2022).

85.  Hui Wan, Yinzuo Qian, Chengqun Gui*, Shengjun Zhou*, Polarized laser-induced plasmonic welding of copper-gold heterogeneous nanojunction for glucose sensor. Optics and Lasers in Engineering 151, 106904 (2022).

84. Lang Shi, Xiaoyu Zhao, Peng Du, Yingce Liu, Qimeng Lv, and Shengjun Zhou*, Enhanced performance of GaN-based visible flip-chip mini-LEDs with highly reflective full-angle distributed Bragg reflectors, Optics Express 2021, 29, 42276.

83. Xiaoyu Zhao, Zehong Wan, Liyan Gong, Guoyi Tao, and Shengjun Zhou*, Enhanced optoelectronic performance of yellow light-emitting diodes grown on InGaN/GaN pre-well structure, Nanomaterials 2021, 11, 3231.

82. Peng Du, Xiaoyu Zhao, Yinzuo Qian, Pengfei Liu, Bin Tang, Lang Shi, Guoyi Tao, and Shengjun Zhou*, Rational superlattice electron blocking layer design for boosting the quantum efficiency of 371 nm ultraviolet light-emitting diodes, IEEE Transactions on Electron Devices, 2021, 68, 6255.

81.  Guoyi Tao, Xiaoyu Zhao, and Shengjun Zhou*, Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes, Optics Letters 46(18), 4593-4596 (2021).

80. Bin Tang, Liyan Gong, Hongpo Hu, Haiding Sun, and Shengjun Zhou*, Toward efficient long-wavelength III-nitride emitters using a hybrid nucleation layer, Optics Express 29(17), 27404-27415 (2021).

79. Bin Tang, Zehong Wan, Hongpo Hu, Liyan Gong, and Shengjun Zhou*, Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice, Applied Physics Letters 118(26), 262101 (2021).

78. Xiaoyu Zhao, Bin Tang, Liyan Gong, Junchun Bai, Jiafeng Ping, and Shengjun Zhou*, Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes, Applied Physics Letters 118, 182102 (2021).

77. Lang Shi, Peng Du, Guoyi Tao, Zongyuan Liu, Wei Luo, Sheng Liu*, and Shengjun Zhou*, High efficiency electron-blocking-layer-free deep ultraviolet LEDs with graded Al-content AlGaN insertion layer, Superlattices and Microstructures 158, 107020(2021).

76. Peng Du, Lang Shi, Sheng Liu, and Shengjun Zhou*. High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer, Japanese Journal of Applied Physics 60(9), 092001(2021).

70. Shiyi Luan, Qiang Zhao, Chengqun Gui*, and Shengjun Zhou*, Welding deformations of welded joints between 1D Ag nanowire connectors and 3D substrates: a molecular dynamics study, Japanese Journal of Applied Physics 60, 015004 (2021).

67. Shuyu Lan, Bin Tang, Hongpo Hu, and Shengjun Zhou*, Strategically constructed patterned sapphire with silica array to boost substrate performance in GaN-based flip-chip visible light-emitting diodes, Optics Express 28(25), 38444-38455 (2020).

66. Yu Lei, Hui Wan, Bin Tang, Shuyu Lan, Jiahao Miao, Zehong Wan, Yingce Liu, and Shengjun Zhou*, Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate, Crystals 10(7), 621 (2020).

65. Bin Tang, Hongpo Hu, Hui Wan, Jie Zhao, Liyan Gong, Yu Lei, Qiang Zhao, Shengjun Zhou*, Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification, Applied Surface Science 518, 146218 (2020).

64. Hui Wan, Chengqun Gui, Dong Chen, Jiaohao Miao, Qiang Zhao, Shiyi Luan, and Shengjun Zhou*, Scattering force and heating effect in laser-induced plasmonic welding of silver nanowire junctions, Applied Optics 59 (7), 2186-2191 (2020).

63. Hui Wan, Shengjun Zhou*, Shuyu Lan and Chengqun Gui, Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes, ECS Journal of Solid State Science and Technology 9, 046002 (2020).

62. Jie Zhao, Hongpo Hu, Yu Lei, Hui Wan, Liyan Gong, and Shengjun Zhou*, Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes, Nanomaterials, 2019, 9, 1634.

61. Hongpo Hu, Bin Tang, Hui Wan, Haiding Sun, Shengjun Zhou*, Jiangnan Dai, Changqing Chen, Sheng Liu, and L. Jay Guo, Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array, Nano Energy, 2020, 69, 104427.

60. Shuyu Lan, Hui Wan, Jie Zhao, and Shengjun Zhou*, Light Extraction Analysis of AlGaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method, Micromachines, 2019, 10, 860.

59. Jiahao Miao, Xinghuo Ding, Shengjun Zhou*, and Chengqun Gui, Fabrication of Dynamic Holograms on Polymer Surface by Direct Laser Writing for High-Security Anti-Counterfeit Applications, IEEE Access 7, 142926-142933 (2019).

58. Shengjun Zhou*, Haohao Xu, Bin Tang, Yingce Liu, Hui Wan, and Jiahao Miao, High-power and reliable vertical light-emitting diodes on 4-inch silicon substrate, Optics Express 27(20), A1506-A1516 (2019).

57. Qiang Zhao, Jiahao Miao, Shengjun Zhou*, Chengqun Gui, Bin Tang, Mengling Liu, Hui Wan and Jinfeng Hu, High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate, Nanomaterials 9(8), 1178 (2019).

56. Bin Tang, Jiahao Miao, Yingce Liu, Shengjun Zhou*, Haohao Xu and Hui Wan, Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs, IEEE Photonics Journal 11(4), 1-7 (2019).

55. Jie Zhao, Xingtong Liu, Haohao Xu, Jiahao Miao, Jinfeng Hu and Shengjun Zhou*, High-Performance Green Flip-Chip LEDs with Double-Layer Electrode and Hybrid Reflector, ECS Journal of Solid State Science and Technology 8(8), Q153-Q157 (2019).

54. Shengjun Zhou, Xingtong Liu, Han Yan, Zhiwen Chen, Yingce Liu, and Sheng Liu*, Highly efficient GaN-based high-power flip-chip light-emitting diodes, Optics Express 27(12), 669 (2019).

53. Hongpo Hu, Shengjun Zhou*, Hui Wan, Xingtong Liu, Ning Li and Haohao Xu, Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer, Scientific Reports 9, 3447 (2019).

52. Hui Wan, Bin Tang, Ning Li, Shengjun Zhou*, Chengqun Gui and Sheng Liu, Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes, Nanomaterials 9(3), 365 (2019).

51. Jie Zhao, Xinghuo Ding, Jiahao Miao, Jinfeng Hu, Hui Wan and Shengjun Zhou*, Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing, Nanomaterials 9(2), 203 (2019).

50. Bin Tang, Jia Miao, Yingce Liu, Hui Wan, Ning Li, Shengjun Zhou* and Chengqun Gui, Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall, Nanomaterials 9(3), 319 (2019).

49. Shengjun Zhou*, Haohao Xu, Hongpo Hu*, Chengqun Gui and ShengLiu*, High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes, Applied Surface Science 471(31), 231-238 (2019).

48. Shengjun Zhou*, Haohao Xu, Mengling Liu, Xingtong Liu, Jie Zhao, Ning Li and Sheng Liu*, Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes, Micromachines 9(12), 650 (2018).

47. Shengjun Zhou*, Mengling Liu, Haohao Xu, Yingce Liu, Yilin Gao, Xinghuo Ding, Shuyu Lan, Yuchen Fan, Chengqun Gui, and Sheng Liu*, High-efficiency GaN-based LED with patterned SiO₂ current blocking layer deposited on patterned ITO, Optics and Laser Technology109, 627 (2019).

46. Shengjun Zhou*, Xingtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao, Zhijue Quan, Chengqun Gui, and Sheng Liu, The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes, Scientific Reports 8, 11053 (2018).

45. Mengling Liu, Jie Zhao, Shengjun Zhou*, Yilin Gao, Jinfeng Hu , Xingtong Liu, and Xinghuo Ding, An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits, Nanomaterials 8, 450(2018).

44. Xingtong Liu, Ning Li, Jinfeng Hu, Yinlin Gao, Ruiqing Wang, and Shengjun Zhou*, Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes, ECS Journal of Solid State Science and Technology 7, Q116-Q122(2018).

43. Shengjun Zhou*, Jiajiang Lv, Yini Wu, Yuan Zhang, Chenju Zheng, and Sheng Liu*, Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes, Japanese Journal of Applied Physics 57, 051003 (2018).

42. Shengjun Zhou*, Yilin Gao, Chenju Zheng, Yingce Liu, Hongpo Hu, Jiajiang Lv, and Xingtong Liu, A comparative study of GaN-based direct current and alternating current high voltage light-emitting diodes, Physica Status Solidi A 215, 1700554 (2018).

41. Chengqun Gui, Xinghuo Ding, Shengjun Zhou*, Yilin Gao, Xingtong Liu, Sheng Liu, Nanoscale Ni/Au wire grids as transparent conductive electrodes in ultraviolet light-emitting diodes by laser direct writing, Optics & Laser Technology 104, 112 (2018).

40. Mengling Liu, Shengjun Zhou*, Xingtong Liu, Yilin Gao, and Xinghuo Ding, Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs, Japanese Journal of Applied Physics 57, 031001 (2018).

39. Shengjun Zhou, Xingtong Liu, Yilin Gao, Yingce Liu, Zongyuan Liu, Chengqun Gui, and Sheng Liu*, Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts, Optics Express 25, 26615 (2017).

38. Xingtong Liu, Shengjun Zhou^*, Yilin Gao, Hongpo Hu, Yingce Liu, Chengqun Gui and Sheng Liu, Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs, Applied Optics 56, 9502 (2017).

37. Hongpo Hu, Shengjun Zhou*, Xingtong Liu, Yilin Gao, Chengqun Gui, Sheng Liu, Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes, Scientific Reports 7, 44627 (2017).

36. Shengjun Zhou*, Hongpo Hu, Xingtong Liu, Mengling Liu, Xinghuo Ding, Chengqun Gui, Sheng Liu, and L. Jay Guo, Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer, Japanese Journal of Applied Physics 56, 111001 (2017).

35. Shengjun Zhou*, Mengling Liu, Hongpo Hu, Yilin Gao, Xingtong Liu, Effect of ring-shaped SiO₂ current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes, Optics & Laser Technology 97, 137 (2017).

34. Mengling Liu, Yilin Gao, Hongpo Hu, Xingtong Liu, Jiajiang Lv, Chenju Zheng, Xinghuo Ding, and Shengjun Zhou*, Effect of interdigitated SiO₂ current blocking layer on external quantum efficiency of high power LEDs, Chinese Journal of Luminescence 38, 786 (2017).

33. Sheng Liu, Chenju Zheng, Jiajiang Lv, Mengling Liu, Shengjun Zhou*, Effect of high-temperature/current stress on the forward tunneling current of InGaN/GaN high-power blue light-emitting diodes, Japanese Journal of Applied Physics 56, 081001 (2017).

32. Xinghuo Ding, Chengqun Gui, Hongpo Hu, Mengling Liu, Xingtong Liu, Jiajiang Lv, Shengjun Zhou*, Reflectance bandwidth and efficiency improvement of light-emitting diodes with double distributed bragg reflector, Applied Optics 56, 4375 (2017).

31. Chenju Zheng, Jiajiang Lv, Shengjun Zhou*, and Sheng Liu, Improvement of Luster Consistency between the p-Pad and the n-Pad of GaN-Based Light-Emitting Diodes via the Under-Etching Process, Journal of the Korean Physical Society 70, 765 (2017).

30. Shengjun Zhou*, Chenju Zheng, Jiajiang Lv, Yilin Gao, Ruiqing Wang, Sheng Liu, “GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction,” Optics & Laser Technology 92, 95–100 (2017).

29. Shengjun Zhou*, Xingtong Liu, “Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes,” Physica Status Solidi A 214, 1600782 (2017).

28. Jiajiang Lv, Chenju Zheng, Quan Chen, Shengjun Zhou*, and Sheng Liu*, High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes, Physica Status Solidi A 213, 3150-3156 (2016).

27. Shengjun Zhou*, Chenju Zheng, Jiajiang Lv, Yingce Liu, Shu Yuan, Sheng Liu, and Han Ding, “Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs,” Applied Surface Science 366, 299-303(2016).

26. Jiajiang Lv, Chenju Zheng, Shengjun Zhou*, Fang Fang, and Shu Yuan, Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls, Physica Status Solidi A 213, 1181-1186(2016).

25. Shengjun Zhou, Shu Yuan, L. Jay Guo, Sheng Liu*, and Han Ding, Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer, Applied Surface Science 355, 1013-1019(2015).

24. Shengjun Zhou, Bin Cao, Shu Yuan, and Sheng Liu*, Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light, Applied Optics 53, 8104-8110(2014).

23. Shengjun Zhou*, Shu Yuan, Sheng Liu, and Han Ding, “Improved light output power of LEDs with embedded air voids structure and SiO₂ current blocking layer,” Applied Surface Science 305, 252–258(2014).

22. Shengjun Zhou, Shufang Wang, Sheng Liu*, and Han Ding. High Power GaN-based LEDs with Low Optical Loss Electrode Structure. Optics & Laser Technology 54, 321(2013).

21. Shengjun Zhou, Fang Fang, Bin Cao, Sheng Liu*, and Han Ding, Enhancement in light output power of LEDs with reflective current blocking layer and backside hybrid reflector. Science China Technological Sciences 56, 1544(2013).

20. Shengjun Zhou, Sheng Liu*, and Han Ding. Enhancement in light extraction of LEDs with SiO₂ current blocking layer deposited on naturally textured p-GaN surface. Optics & Laser Technology 47, 127(2013).

19. Bin Cao, Shengjun Zhou, and Sheng Liu*. Effects of ITO Pattern on the Electrical and Optical Characteristics of LEDs. ECS Journal of Solid State Science and Technology 2, R24 (2013).

18. Bin Cao, Shuiming Li, Run Hu, Shengjun Zhou, Yi Sun, Zhiying Gan, and Sheng Liu*. Effects of Current Crowding on Light Extraction Efficiency of Conventional GaN-Based Light-emitting Diodes. Optics Express 21, 25381 (2013).

17. Shengjun Zhou, Bin Cao, Sheng Liu*, Han Ding. Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO. Optics & Laser Technology 44, 2302 (2012).

16. Shengjun Zhou, Bin Cao and Sheng Liu*. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED. Applied Physics A: Materials Science & Processing 104, 369 (2011).

15. Quan Chen, Xiaobing Luo*, Shengjun Zhou, and Sheng Liu. Dynamic Junction Temperature Measurement for High Power LEDs. Review of Scientific Instruments 82, 084904 (2011).

14. Shengjun Zhou, Bin Cao and Sheng Liu*. Dry etching characteristics of GaN using Cl₂/BCl₃ inductively coupled plasmas. Applied Surface Science 257, 905 (2010).

13. Shengjun Zhou, and Sheng Liu*. Transient measurement of light-emitting diode characteristic parameters for production lines. Review of Scientific Instruments 80, 095102 (2009).

12. Shengjun Zhou, and Sheng Liu*. Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching. Applied Surface Science 255, 9469 (2009).

11. Shengjun Zhou, Shunsheng Guo, and Binhai Yu. Design of Testing System for LED Optoeletronic Parameter Based on LabVIEW. Semiconductor Optoelectronics 28, 501(2007).

10. Shengjun Zhou, Sheng Liu, and Bin Cao. Through silicon via-hole-based thin-film light emitting diodes. 60th Electronic Components and Technology Conference (ECTC), 2010.

9. Shengjun Zhou, Qin Zhang, Bin Cao, Sheng Liu. Evaluation of GaN-based Blue Light Emitting Diodes Based on Temperature/Humidity Accelerated Tests. 1^1th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010.

8. Shengjun Zhou, Bin Cao and Sheng liu. Integration of GaN Thin Film and Dissimilar Substrate Material by Au-Sn Wafer Bonding and CMP. International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2009.

7. Shengjun Zhou, Zhaohui Chen, Sheng Liu. Fabrication of Thin-film LEDs by Au-Sn Wafer Bonding & CMP. 6^th China International Forum on Solid State Lighting, 2009.

6. Shengjun Zhou, Chuan Liu, Xuefang Wang, Xiaobing Luo, Sheng Liu. Integrated Process for Silicon Wafer Thinning. 61th Electronic Components and Technology Conference (ECTC), 2011.

5. Sheng Liu, Shengjun Zhou, Kai Wang, Zhaohui Chen, and Xiaobing Luo. Several Co-design Issues Using DfX for Solid State Lighting. 2011 ICEPT-HDP.

4. Cao Li, Shengjun Zhou, Chang Hu, Xuefang Wang, Sheng Liu. Novel Design of Handling System for Silicon Wafer Thinning. 2011 ICEPT-HDP.

3. Zhaohui Chen, Shengjun Zhou, and Sheng Liu. Expert advisor for integrated virtual manufacturing and reliability for TSV/SiP based modules. 61th Electronic Components and Technology Conference (ECTC), 2011 (Oral Presentation).

2. Shengjun Zhou, and Sheng Liu. In situ measurement and binning system of LED for improved color consistency. 2011 ICEPT-HDP. 31

1. Cao Li, Xuefang Wang, Mingxiang Chen, Shengjun Zhou, Yaping Lv, and Sheng Liu. Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology. 63^rd Electronic Components and Technology Conference (ECTC), 2013.

授权国家发明专利

39. 一种全彩化Micro-LED显示面板及其制造方法，中国发明专利，专利号：ZL 202111213208.8

38. 一种汽车照明用Mini-LED芯片阵列及其制造方法， 中国发明专利， 专利号：ZL 202111213329.2

37. 深紫外Micro-LED芯片阵列及制备方法，中国发明专利，专利号：ZL 202210805276.1

36. 嵌入量子点的全彩 Micro-LED 显示芯片及其制备方法，中国发明专利，专利号：ZL 202210043578.X

35. Micro-LED巨量转移方法及装置，中国发明专利，专利号：ZL 202011041106.8

34. 一种MicroLED芯片及其制造方法，中国发明专利，专利号：ZL 202111458290.0

33. 一种倒装Micro-LED芯片及其制造方法，中国发明专利，专利号：ZL 202210015865.X

32. 具有超纳米晶金刚石导电层的发光二极管芯片及制备方法，中国发明专利，专利号：ZL 202110482524.9

31. 具有表面非周期光栅图案的发光二极管及其制备方法，中国发明专利，专利号：ZL 202011542840.2

30. 一种悬臂梁结构的SiC温度传感器及其制造方法，中国发明专利，专利号：ZL201910981318

29. 一种实现三轴测力的大量程电容式柔性传感器，中国发明专利，专利号：ZL 202011458947

28. 一种集成结构Micro-LED显示器及其制备方法，中国发明专利，专利号：ZL 202110742352.4

27. 高倍率外延生长GaN的氧化物气相外延法装置，中国发明专利，专利号：ZL 202110742352.4

26. 选区刻蚀外延Micro-LED芯片及其设计、制备方法，中国发明专利，专利号：ZL 2021104393368

25. 一种具有嵌入式散射层的倒装发光二极管及其制备方法，中国发明专利，专利号：ZL 202010664524.6

24. 粘合层转印的薄膜倒装结构Micro-LED芯片及其制备方法，中国发明专利，专利号：ZL 202010883941.X

23. 一种激光制备图案化透明导电薄膜的方法中国发明专利，中国发明专利，专利号：ZL 201911149767.X

22. 一种垂直结构深紫外LED芯片的制造方法，中国发明专利，专利号：ZL 202010397372.8

21. 一种Micro-LED显示芯片及其制备方法，中国发明专利，专利号：ZL 201910950420.9

20. 一种氮化铝外延结构及其生长方法，中国发明专利，专利号：ZL 202010096533.X

19. 具有复合成核层的发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 201911001360.2

18. 激光诱导制备纳米合金颗粒的方法， 中国发明专利，专利号：ZL 201910885828.2.

17. 一种激光快速制备金属纳米多孔材料的方法， 中国发明专利，专利号：ZL 201910764744.3.

16. 一种深紫外LED芯片及其制备方法，中国发明专利，专利号：ZL 20191043226.1.

15. 一种侧壁具有纳米棱镜结构的氮化镓基发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 201811162925.0.

14. 全色堆栈式RGB 倒装Micro-LED芯片阵列及其制备方法, 中国发明专利，专利号：ZL 201811611374.1.

13. 倒装结构发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 201810997251.X.

12. 一种三基色垂直结构微型LED芯片制造与转印方法, 中国发明专利，专利号：ZL 201810693649.4.

11. 具有纳米级二氧化硅光栅钝化层的GaN基发光二极管及其加工方法，中国发明专利，专利号：ZL 201810253009.1.

10. 蚀刻阻挡层结构、含其的外延片及该外延片的制作方法，中国发明专利，专利号：ZL 201711243780.2.

9. 基于激光直写的Micro-LED的制造方法，中国发明专利，专利号：ZL 201710846736.4.

8. 紫外发光二极管外延结构及其制备，中国发明专利，专利号：ZL 201710161944.0.

7. 一种半导体发光器件及其制备方法，中国发明专利，专利号：ZL 201710093011.2.

6. 一种倒装芯片电极及其制备方法，中国发明专利，专利号：ZL 201610954442.9.

5. 一种紫外发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 201610103621.1.

4. 高压直流氮化镓基发光二极管及其制造方法，中国发明专利，专利号：ZL 201511031187.2.

3. LED卷对卷封装模组，中国发明专利，专利号：ZL 201410079623.2.

2. 金属电极具有阵列型微结构的发光二极管及其制造方法，中国发明专利，专利号：ZL 201210349636.8.

1. LED圆片级芯片尺寸封装结构及封装工艺，中国发明专利，专利号：ZL 201110457672.1.

学术专著和会议论文集

1. Shengjun Zhou and Sheng Liu, III-Nitride LEDs: From UV to Green, Springer, 2022

2. 周圣军，刘胜，《氮化镓基发光二极管芯片设计与制造技术》，科学出版社，2019

3. Sheng Liu and Shengjun Zhou, Proceedings of 2016 17th International Conference on Electronic Packaging Technology (ICEPT), ISBN: 978-1-5090-1396-8

承担科研任务

1. 国家自然科学基金面上项目—高性能AlGaN基超薄隧道结垂直结构深紫外LED芯片制造的关键基础问题研究，负责人

2. 国家重点研发计划—柔性Micro-LED显示关键技术研究，子课题负责人

3. 国家自然科学基金面上项目—面向高分辨率显示的三基色薄膜倒装Micro-LED芯片制造与巨量转印技术研究，负责人

4. 国家重点研发计划—高亮度高对比度全彩Micro-LED显示关键技术研究，子课题负责人

5. 国家自然科学基金面上项目—深紫外LED芯片金属线网格透明电极与高效出光结构制造的关键技术研究，负责人

6. 国家“万人计划”青年拔尖人才支持计划，InGaN基长波段Micro-LED芯片关键技术研究，负责人

7. 国家重点研发计划—激光制备纳米材料/结构及其用于低温连接的技术与装备及应用，子课题负责人

8. 国家自然科学基金青年基金项目—大尺寸高压直流LED芯片制造的关键技术研究，项目负责人

9. 国家863计划项目—基于失效机理的LED 照明系统可靠性与可控寿命技术研究，子课题负责人

10. 湖北省杰出青年基金—基于激光制造深紫外LED芯片高效出光结构的关键技术研究，负责人

11. 广东省部产学研结合项目—新型高速光谱仪关键技术及其在LED荧光粉在线测试中的应用，负责人

学术荣誉与奖项

2024 爱思唯尔中国高被引学者

2023  3551光谷人才计划

2022 Fellow of IAAM

2022 《光子学报》第一届青年编委

2021 国家自然科学基金机械工程学科优秀结题项目（IMCC 2021）

2021 IAAM Scientist Medal

2021 Fellow of VEBLEO

2021 英国物理学会Outstanding Reviewer Award

2021 中国产学研合作创新奖

2020 中组部青年拔尖人才

2020 英国物理学会TOP CITED PAPER AWARD

2018 湖北省杰青

2017 湖北省楚天学者

2016 ICEPT 2016国际学术会议组织委员会共同主席

2015 武汉大学珞珈青年学者

2012 上海交通大学优秀博士后

2011 上海交通大学优秀博士学位论文

2010 第六十届ECTC国际会议杰出贡献奖

2009 湖北省优秀硕士学位论文